Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs

Christian Strenger; Viktoryia Uhnevionak; Vincent Mortet; Guillermo Ortiz; Tobias Erlbacher; Alexander Burenkov; Anton J. Bauer; Fuccio Cristiano; Eléna Bedel-Pereira; Peter Pichler; Heiner Ryssel; Lothar Frey

doi:10.4028/www.scientific.net/MSF.778-780.583

Paper Titles

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Reduction of Density of 4H-SiC / SiO₂ Interface Traps by Pre-Oxidation Phosphorus Implantation
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Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC
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Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Systematic Analysis of the High- and Low-Field...

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs

Abstract:

In this work, we investigate the impact of Al-implantation into n-MOSFET channel regions together with its p-doping concentration upon the mobility limiting scattering mechanisms in the channel. For this purpose, a study of the interface trap density, interface trapped charge density, field-effect mobility, and Hall mobility is carried out for normally-off n-MOSFETs with different doping profiles and concentrations in the channel region. The trend of the field-effect and the Hall mobility as well as the differences thereof will be discussed. Based on the determined mobilities in the range from 11.9 cm²/Vs to 92.4 cm²/Vs, it will be shown that for p-doping concentrations above 5·10¹⁶ cm^-3 Coulomb scattering is the dominant scattering mechanism for both, low- and high-field mobility. In contrast, for p-doping concentrations below 5·10¹⁶, cm^-3 further scattering mechanisms will be considered that may account for the observed mobility trend at high electric fields.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

583-586

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.583

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Online since:

February 2014

Authors:

Christian Strenger, Viktoryia Uhnevionak, Vincent Mortet, Guillermo Ortiz, Tobias Erlbacher, Alexander Burenkov, Anton J. Bauer, Fuccio Cristiano, Eléna Bedel-Pereira, Peter Pichler, Heiner Ryssel, Lothar Frey

Keywords:

4H-SiC, Coulomb, Field-Effect, Hall Effect, High-Field, Interface Trap Density, Low-Field, Mobility, MOSFET, Surface Roughness (SR)

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