Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors

Stephen M. Thomas; Michael R. Jennings; Yogesh K. Sharma; Craig A. Fisher; Philip  Andrew Mawby

doi:10.4028/www.scientific.net/MSF.778-780.599

Paper Titles

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs
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Experimental Studies on Water Vapor Plasma Oxidation and Thermal Oxidation of 4H-SiC (0001) for Clarification of the Atomic-Scale Flattening Mechanism in Plasma Assisted Polishing
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Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC
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Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures
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Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors
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Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy
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4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C
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Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4^o Off-Axis Si-Face 4H-SiC Epitaxial Wafers
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Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Impact of the Oxidation Temperature on the...

Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors

Abstract:

Despite the material advantages of Silicon-Carbide (SiC), the on resistance of 4H-SiC metal-oxide-semiconductor transistors are severely degraded by high trap densities near the oxide/SiC interface (D_it). In this work, the effect of the oxidation ambient (oxygen flow rates of 0.05 l/min-2.5 l/min) and oxidation temperature (1200°C-1600°C) on the D_it is investigated. The D_it was reduced by up to an order of magnitude using a combination of a low oxygen flow rate and a high temperature. The D_it was extracted from capacitance-voltage measurements made on MOS capacitors.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

599-602

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.599

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Online since:

February 2014

Authors:

Stephen M. Thomas*, Michael R. Jennings, Yogesh K. Sharma, Craig A. Fisher, Philip Andrew Mawby

Keywords:

4H-SiC, High-Temperature, Interface Trap Density, Oxidation

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