4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C

Harsh Naik; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.778-780.607

Paper Titles

Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC
p.591

Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures
p.595

Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors
p.599

Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy
p.603

4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C
p.607

Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4^o Off-Axis Si-Face 4H-SiC Epitaxial Wafers
p.611

Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
p.615

NF₃ Added Oxidation of 4H-SiC(0001) and Suppression of Interface Degradation
p.619

Characterization of SiO₂/SiC Interfaces Annealed in N₂O or POCl₃
p.623

HomeMaterials Science ForumMaterials Science Forum Vols. 778-7804H-SiC MOS Capacitors and MOSFET Fabrication with...

4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C

Abstract:

This paper compares the performance of 4H-SiC MOS capacitors and MOSFETs made using the conventional NO annealing process and a high-temperature (1400°C) dry oxidation process. Through extensive C-V, G-ω, I-V and Hall measurements, the limitations of both the processes are discussed.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

607-610

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.607

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Online since:

February 2014

Authors:

Harsh Naik*, T. Paul Chow

Keywords:

4H-SiC, C-V Measurement, G-ω Measurement, Hall Measurement, Interface State Density, MOS Capacitor, MOSFET, No Anneal

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