Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4o Off-Axis Si-Face 4H-SiC Epitaxial Wafers

Akira Bandoh; Kenji Suzuki; Yoshihiko Miyasaka; Hiroshi Osawa; Takayuki Sato

doi:10.4028/www.scientific.net/MSF.778-780.611

Paper Titles

Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures
p.595

Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors
p.599

Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy
p.603

4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C
p.607

Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4^o Off-Axis Si-Face 4H-SiC Epitaxial Wafers
p.611

Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
p.615

NF₃ Added Oxidation of 4H-SiC(0001) and Suppression of Interface Degradation
p.619

Characterization of SiO₂/SiC Interfaces Annealed in N₂O or POCl₃
p.623

Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures
p.627

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Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4^o Off-Axis Si-Face 4H-SiC Epitaxial Wafers

Abstract:

The step-bunching dependence of the lifetime of metal–oxide–semiconductor capacitors on 4° off-axis 4H-SiC epitaxial wafers was investigated. The effects of the C/Si ratios in epitaxial growth and the substrate properties were examined. Step-bunching was observed at the base of triangle or trapezoid defects. Step-bunching decreased as the C/Si ratio was reduced. Time-dependent dielectric breakdown (TDDB) measurements showed that the locations of short lifetime breakdowns closely matched step-bunching positions. TDDB measurements of four different commercial substrates showed clear differences in capacitor lifetime.