Analysis of C-Face 4H-SiC MOS Capacitors with ZrO2 Gate Dielectric

Le Shan Chan; Yu Hao Chang; Kung Yen Lee

doi:10.4028/www.scientific.net/MSF.778-780.635

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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Analysis of C-Face 4H-SiC MOS Capacitors with ZrO2...

Analysis of C-Face 4H-SiC MOS Capacitors with ZrO₂ Gate Dielectric

Abstract:

ZrO₂ films were deposited on C-face 4H-SiC substrates by using an RF sputter at a temperature of 200°C. Then, ZrO₂ films were treated with RTA (rapid thermal annealing) process in Argon (Ar) ambient at 600°C, 700°C and 800°C for 4 minutes, respectively. The samples with RTA process show the lower leakage currents. As the measure temperature increases from room temperature (RT) to 150°C, the dielectric breakdown voltage reduces from 3 V to 1 V. The difference between quasi C-V characteristics and high frequency C-V characteristics at 1 MHz becomes larger with increasing RTA temperature. The C-V curves also shift to the left side as the measure temperature increases from RT to 150°C. It also shows the ledge on the C-V curves of samples with RTA at elevated measure temperature.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

635-638

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.635

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Online since:

February 2014

Authors:

Le Shan Chan, Yu Hao Chang, Kung Yen Lee*

Keywords:

4H-SiC, Gate Dielectric, MOS Capacitor, RTA, Zro₂

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References

[1] P. G. Karlsson, L. I. Johansson, J. H. Richter, C. Virojanadara, J. Blomquist, P. Uvdal, and A. Sandell, Surf. Sci., 601, 2390-2400 (2007).

DOI: 10.1016/j.susc.2007.04.026

Google Scholar

[2] K. Prabakar, A. Park, N. Cho, W. I. Lee, C. K. Hwangbo, J. G. Lee, and C. Lee, Vacuum, 82, 1367-1370 (2008).

DOI: 10.1016/j.vacuum.2008.03.039

Google Scholar

[3] T. Kurniawan, Y. H. Wong, K. Y. Cheong, J. H. Moon, W. Bahng, K. A. Razak, Z. Lockman, H. J. Kim, and N. -K. Kim, Mat. Sc. Semicon. Proc., 14, 13-17 (2011).

Google Scholar

[4] W. J. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Ngai, S. Banerjee, and J. C. Lee, IEDM '99. Technical Digest. International, pp.145-148, (1999).

Google Scholar

[5] J. H. Ko, S. H. Kim, S. H. Jee, and Y. S. Yoon, J. Korean. Phys. Soc., 50, 1843-1847 (2007).

Google Scholar

[6] K. Yim, Y. Park, A. Park, N. Cho, and C. Lee, J. Mater. Sci. Technol., 22, 807-810 (2006).

Google Scholar

[7] H. Yano, F. Katafuchi, T. Kimoto, H. Matsunami, IEEE T. Electron Dev., 46, 504–510 (1999).

Google Scholar

[8] K. Fukuda, W.J. Cho, K. Arai, S. Suzuki, J. Senzaki, T. Tanaka, Appl. Phys. Lett., 77, 866–868 (2000).

Google Scholar