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Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC Wafers by Using Chemical Etching with Molten KCl+KOH
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Thinning of a Two-Inch Silicon Carbide Wafer by Plasma Chemical Vaporization Machining Using a Slit Electrode
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A Novel Grinding Technique for 4H-SiC Single-Crystal Wafers Using Tribo-Catalytic Abrasives
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Dicing of SiC Wafer by Atmospheric-Pressure Plasma Etching Process with Slit Mask for Plasma Confinement
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Multi-Wire Electrical Discharge Slicing for Silicon Carbide Part 2: Improvement on Manufacturing Wafers by Forty-Wire EDS
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A Novel Grinding Technique for 4H-SiC Single-Crystal Wafers Using Tribo-Catalytic Abrasives

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Abstract:

Diamond abrasives are generally used to machine silicon carbide (SiC) single crystals because of the high hardness of those crystals. Although Chemo-Mechanical Polishing (CMP) employs abrasives softer than the SiC single crystals together with oxidizing agents in order to avoid mechanical damage to the surface of SiC single-crystal wafers, none has reported so far the use of abrasive wheels other than diamond for grinding large SiC single-crystal wafers. The current study revealed that a novel grinding technique using non-diamond abrasives such as ceria (CeO2) can efficiently machine large SiC single-crystal wafers of 100 mm in diameter due hypothetically to the nature of newly named tribo-catalytic abrasives, and is promising to minimize the surface damage prior to the final CMP step.

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Silicon Carbide and Related Materials 2013 View Preview

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

754-758

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.754

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Online since:

February 2014

Authors:

Takanori Kido*, Masatake Nagaya, Kenji Kawata, Tomohisa Kato

Keywords:

Grinding, Silicon Carbide (SiC), Tribo-Catalytic Abrasives

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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References

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