High-Speed Slicing of SiC Ingot by High-Speed Multi Wire Saw

Hiroto Maeda; Ryuichi Takanabe; Atsunori Takeda; Syogo Matsuda; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.778-780.771

Paper Titles

A Novel Grinding Technique for 4H-SiC Single-Crystal Wafers Using Tribo-Catalytic Abrasives
p.754

Dicing of SiC Wafer by Atmospheric-Pressure Plasma Etching Process with Slit Mask for Plasma Confinement
p.759

Multi-Wire Electrical Discharge Slicing for Silicon Carbide Part 2: Improvement on Manufacturing Wafers by Forty-Wire EDS
p.763

Effects of Machining Fluid on Electric Discharge Machining of SiC Ingot
p.767

High-Speed Slicing of SiC Ingot by High-Speed Multi Wire Saw
p.771

Development of Multi-Wire Electric Discharge Machining for SiC Wafer Processing
p.776

Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical Etching
p.780

Characteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge Machining
p.784

Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD
p.791

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High-Speed Slicing of SiC Ingot by High-Speed Multi Wire Saw

Abstract:

Development of high efficient and high accuracy slice processing technology is required for realizing the high quality and low cost large SiC wafer. Our target of high speed slicing is slicing a 6 inch SiC single crystal ingot in about 9 hours. This slicing speed is about 10 times higher than the loose abrasive slurry sawing and about 4 times higher than the current technology of diamond wire sawing. The slicing speed and the slicing accuracy are in the relationship of trade-off. Therefore, in this research, we have studied the high speed slicing technique of 3 inch and 4 inch SiC single crystal ingot aiming at reduction of sliced wafers SORI. Moreover, we have extracted subjects to scale-up for the high speed slicing of the 6 inch SiC single crystal ingot.