Development of Multi-Wire Electric Discharge Machining for SiC Wafer Processing

Masumi Ogawa; Kei Mine; Seiki Fuchiyama; Yasuhiro Tawa; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.778-780.776

Paper Titles

Dicing of SiC Wafer by Atmospheric-Pressure Plasma Etching Process with Slit Mask for Plasma Confinement
p.759

Multi-Wire Electrical Discharge Slicing for Silicon Carbide Part 2: Improvement on Manufacturing Wafers by Forty-Wire EDS
p.763

Effects of Machining Fluid on Electric Discharge Machining of SiC Ingot
p.767

High-Speed Slicing of SiC Ingot by High-Speed Multi Wire Saw
p.771

Development of Multi-Wire Electric Discharge Machining for SiC Wafer Processing
p.776

Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical Etching
p.780

Characteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge Machining
p.784

Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD
p.791

Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications
p.795

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Development of Multi-Wire Electric Discharge...

Development of Multi-Wire Electric Discharge Machining for SiC Wafer Processing

Abstract:

In order to slice the larger size ingot toward 6 inch of silicon carbide (SiC), we are developing Multi-wire Electric Discharge Machining (EDM). To prevent wire break during slicing, we have developed the electric discharge pulse control system. So far, with 10 multi-wires, we have succeeded in slicing of 4 inch SiC balk single crystal without wire break. High quality slicing surface (e.g. small value of around 10 μm of SORI for 3 inchi wafer) was also achieved. By polishing methode, EDM-sliced wafer was estimated to have the uniform thickness of damaged layer over the entire surface. We confirmed that the wafer sliced by EDM can be processed in the later process, by grinding the 3 inch wafer. And it was confirmed that 6 inch ingot can be sliced with 10 multi-wire EDM, by slicing the boule of SiC poly crystal. For the larger diameter ingot than 4 inch, Multi-wire EDM will be practically used by the effective removal of machining chips from the machining clearance between the wire and work.