Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD

Kohei Ebihara; Yasuki Yamamoto; Yoshiyuki Nakaki; Sunao Aya; Shuhei Nakata; Masayuki Imaizumi; Yoshihiko Toyoda; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.778-780.791

Paper Titles

High-Speed Slicing of SiC Ingot by High-Speed Multi Wire Saw
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Development of Multi-Wire Electric Discharge Machining for SiC Wafer Processing
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Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical Etching
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Characteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge Machining
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Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD
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Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications
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Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode
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Evaluation of Buried Grid JBS Diodes
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High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Designing and Fabrication of the VLD Edge...

Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD

Abstract:

Edge termination guaranteeing high breakdown voltage and robustness in its fabrication are required in SiC power devices. We newly employed the VLD edge termination for 3.3 kV-rated SiC SBDs, which was formed by Al ion implantation using a resist mask having a varying thickness. The breakdown voltage is recorded to be over 96% of the parallel-plane breakdown voltage, and the reverse bias characteristics are well accorded with the result of TCAD simulation.