Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode

Run Hua Huang; Gang Chen; Song Bai; Rui Li; Yun Li; Yong Hong Tao

doi:10.4028/www.scientific.net/MSF.778-780.800

Paper Titles

Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical Etching
p.780

Characteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge Machining
p.784

Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD
p.791

Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications
p.795

Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode
p.800

Evaluation of Buried Grid JBS Diodes
p.804

High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step
p.808

The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)
p.812

Temperature and dI_DS/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications
p.816

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Simulation, Fabrication and Characterization of...

Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode

Abstract:

4H-SiC JBS diode with breakdown voltage higher than 4.5 kV, has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper we report the design, the fabrication, and the electrical characteristics of 4H-SiC JBS diode. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The epilayer properties of the N-type are 55 μm with a doping of 9×10¹⁴ cm⁻³. The diodes were fabricated with a floating guard rings edge termination. The on-state voltage was 4V at J_F =80 A/cm²