The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)

Hao Yuan; Xiao Yan Tang; Yi Men Zhang; Yu Ming Zhang; Hong Liang Lv; Yue Hu Wang; Yu Fei Zhou; Qing Wen Song

doi:10.4028/www.scientific.net/MSF.778-780.812

Paper Titles

Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications
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Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode
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Evaluation of Buried Grid JBS Diodes
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High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step
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The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)
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Temperature and dI_DS/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications
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Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate
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4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis
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Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780The Fabrication of 4H-SiC Floating Junction SBDs...

The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)

Abstract:

Based on the theoretical analysis and the simulation results of the ion implantation process and the floating Junction structure, a 4H-SiC SBD with floating junction (FJ_SBD) is fabricated. Compared with the on-resistance 5.13 mΩ·cm² of conventional SBD fabricated at the same time, the on-resistance of FJ_SBD with 3μm P+ buried box is only 6.29 mΩ·cm². The breakdown voltage of the FJ_SBD reaches 950V which is much higher than the 430V of conventional SBD. According to the presented results, The BFOM of the FJ_SBD is 3 times higher than the value of the conventional SBD. It is proved that FJ-SBD has greater prospects for development.

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Materials Science Forum (Volumes 778-780)

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812-815

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.812

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Online since:

February 2014

Authors:

Hao Yuan, Xiao Yan Tang, Yi Men Zhang, Yu Ming Zhang, Hong Liang Lv, Yue Hu Wang, Yu Fei Zhou, Qing Wen Song

Keywords:

4H-SiC, FJ_SBD, Ion Implantation

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