Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

Junichi Hasegawa; Kazuya Konishi; Yu Nakamura; Kenichi Ohtsuka; Shuhei Nakata; Yoshifumi Nakamine; Tadashi Nishimura; Mutsuko Hatano

doi:10.4028/www.scientific.net/MSF.778-780.828

Paper Titles

The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)
p.812

Temperature and dI_DS/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications
p.816

Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate
p.820

4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis
p.824

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation
p.828

Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation
p.832

Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC
p.836

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode
p.841

Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth
p.845

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Investigation of Stacking Faults Affecting on...

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

Abstract:

We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

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Materials Science Forum (Volumes 778-780)

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828-831

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.828

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Online since:

February 2014

Authors:

Junichi Hasegawa*, Kazuya Konishi, Yu Nakamura, Kenichi Ohtsuka, Shuhei Nakata, Yoshifumi Nakamine, Tadashi Nishimura, Mutsuko Hatano

Keywords:

Characterization, Junction Barrier Schottky (JBS) Diode, Leakage Current, Simulation

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References

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