Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

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We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

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Periodical:

Materials Science Forum (Volumes 778-780)

Edited by:

Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki and Yasuhisa Sano

Pages:

828-831

DOI:

10.4028/www.scientific.net/MSF.778-780.828

Citation:

J. Hasegawa et al., "Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation", Materials Science Forum, Vols. 778-780, pp. 828-831, 2014

Online since:

February 2014

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$35.00

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[1] H. Fujiwara, H. Naruoka, M. Konishi, K. Hamada, T. Katsuno, T. Ishikawa, Y. Watanabe, and T. Endo: Appl. Phys. Lett Vol. 101 (2012), 042104.

[2] K. Ohtsuka, T. Nakatani, A. Nagae, H. Watanabe, Y. Nakaki, Y. Fujii, K. Fujihira, S. Nakata, and N. Yutani: Mater. Sci. Forum Vol. 725 (2012), pp.53-56.

DOI: 10.4028/www.scientific.net/msf.725.53

[3] K. Konishi, S. Nakata, Y. Nakaki, Y. Nakao, A. Nagae, T. Tanaka, Y. Nakamura, Y. Toyoda, H. Sumitani, and, T. Oomori: Jpn. J. Appl. Phys. Vol. 52 (2013), 04CP05.

DOI: 10.7567/jjap.52.04cp05

[4] H. Fujiwara, T. Kimoto, T. Tojo, and H. Matsunami: Appl. Phys. Lett. Vol. 87 (2005), 051912.

[5] B. Lee, A. Steckl, J. Zavada, and, R. Wilson: MRS Proceedings Vol. 513 (1998), No. 1.

[6] S. Davydov: Semiconductors Vol. 41 (2007), No. 6, pp.696-698.

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