Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC

Arash Salemi; Benedetto Buono; Anders Hallén; Jawad Hassan; Peder Bergman; Carl Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.778-780.836

Paper Titles

Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate
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4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis
p.824

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation
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Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation
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Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC
p.836

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode
p.841

Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth
p.845

V_F Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers
p.851

13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Fabrication and Design of 10 kV PiN Diodes Using...

Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC

Abstract:

10 kV PiN diodes using on-axis 4H-SiC were designed, fabricated, and measured. A lifetime enhancement procedure was done by carbon implantation followed by high temperature annealing to increase lifetime to above 2 μs. The device simulation software Sentaurus TCAD has been used in order to optimize the diode. All fabricated diodes are fully functional and have a V_F of 3.3 V at 100 A/cm² at 25°C, which was decreased to 3.0 V at 300°C.

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Materials Science Forum (Volumes 778-780)

Pages:

836-840

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.836

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Online since:

February 2014

Authors:

Arash Salemi*, Benedetto Buono, Anders Hallén, Jawad Hassan, Peder Bergman, Carl Mikael Zetterling, Mikael Östling

Keywords:

Lifetime Enhancement, On-Axis 4H-SiC, PiN Diode, V_F

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