High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode

Koji Nakayama; Shuji Ogata; Toshihiko Hayashi; Tetsuro Hemmi; Atsushi Tanaka; Toru Izumi; Katsunori Asano; Dai Okamoto; Yasunori Tanaka; Tomonori Mizushima; Mitsuru Yoshikawa; Hiroyuki Fujisawa; Kensuke Takenaka; Manabu Takei; Yoshiyuki Yonezawa; Kenji Fukuda; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.778-780.841

Paper Titles

4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis
p.824

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation
p.828

Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation
p.832

Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC
p.836

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode
p.841

Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth
p.845

V_F Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers
p.851

13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
p.855

Variant of Excess Current in 4H-SiC pn Structures
p.859

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780High Voltage and Fast Switching Reverse Recovery...

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode

Abstract:

The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier lifetime is equal to or shorter than the reverse recovery time. High voltage and fast switching are therefore needed for accurate analysis of the reverse recovery characteristics. The current reduction rate increases up to 2 kA/μs because of low stray inductance. The maximum reverse voltage during the reverse recovery time reaches 8 kV, at which point the drift layer is fully depleted. The carrier lifetime at the high level injection is 0.086 μs at room temperature and reaches 0.53 μs at 250 °C.