Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation

Abstract:

Ultrahigh-voltage SiC PiN diodes with an original junction termination extension (JTE) structure and improved forward characteristics are presented. A space-modulated JTE (SM-JTE) structure was designed by device simulation, and a high breakdown voltage of 26.9 kV was achieved by using a 270 μm-thick epilayer and 1050 μm-long JTE. In addition, lifetime enhancement process via thermal oxidation was performed to improve the forward characteristics. The on-resistance of the SiC PiN diodes was remarkably reduced by lifetime enhancement process. The temperature dependence of the on-resistance was also discussed.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 832-835
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.832
• Online since: February 2014
• Authors: Naoki Kaji*, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto
• Keywords: Device Simulation, Junction Termination Extension (JTE), Lifetime Enhancement, PiN Diode

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