Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate

Yosuke Nakanishi; Takaaki Tominaga; Hiroaki Okabe; Yoshiyuki Suehiro; Kazuyuki Sugahara; Takeharu Kuroiwa; Yoshihiko Toyoda; Satoshi Yamakawa; Hiroyuki Murasaki; Kazuo Kobayashi; Hiroaki Sumitani

doi:10.4028/www.scientific.net/MSF.778-780.820

Paper Titles

Evaluation of Buried Grid JBS Diodes
p.804

High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step
p.808

The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)
p.812

Temperature and dI_DS/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications
p.816

Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate
p.820

4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis
p.824

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation
p.828

Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation
p.832

Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC
p.836

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Properties of a SiC Schottky Barrier Diode...

Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate

Abstract:

One of the attractive methods to reduce the differential resistance of SiC devices is to make the thickness of a SiC substrate thinner [1]. Therefore, we fabricated SiC Schottky barrier diode (SBD) chips with a thickness below 150 μm and the properties of the SiC-SBD chips were measured. It was confirmed that the junction temperature of the thin SiC-SBD chips was decreased by the combination of the reduction in a thickness of the chip and the back side bonding of the chip using a material with high thermal conductivity. Moreover, it was confirmed that the potential of the thin SiC-SBD chip for the surge current capacity could be enhanced to combine the thin SiC-SBD chip with the back side bonding which has high thermal conductivity.