Temperature and dIDS/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications

Saeed Jahdi; Olayiwola Alatise; Philip  Andrew Mawby

doi:10.4028/www.scientific.net/MSF.778-780.816

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Temperature and dI_DS/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications

Abstract:

This paper presents the temperature and switching rate dependence of 1.2 kV/30 A SiC Schottky diode energy losses in clamped inductive switching circuits with 1.2 kV/30 A SiC MOSFETs as the switching transistors. The devices are tested under an ambient temperature range that spans from -75°C to 175°C and with switching rates that span from 10 to 100 A/μs. Due to the abruptness of the diode turn-OFF, low series resistance and the lack of reverse recovery, SiC SBDs are known to exhibit ringing or electromagnetic oscillations in the presence of parasitic inductances and high switching rates. The impact of these electromagnetic oscillations on the switching energy, the dependence of the switching energy on temperature and the switching rate (dI_DS/dt) is the purpose of this paper’s investigation.

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Materials Science Forum (Volumes 778-780)

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816-819

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.816

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Online since:

February 2014

Authors:

Saeed Jahdi*, Olayiwola Alatise, Philip Andrew Mawby

Keywords:

Clamped Inductive Switching, Schottky Barrier Diode (SBD), Silicon Carbide (SiC), Switching Energy, Temperature Dependence

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References

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