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Paper Titles
Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation
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Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC
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High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode
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Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth
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VF Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers
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13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
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Variant of Excess Current in 4H-SiC pn Structures
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The Cryogenic Testing and Characterisation of SiC Diodes
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Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth

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Abstract:

Super-junction (SJ) devices have been developed to improve the trade-off relationship between the blocking voltage (VBD) and specific on-resistance in unipolar power devices. This SJ structure effect is expected in SiC unipolar devices. Multi-epitaxial growth is a known fabrication method for SJ structures where epitaxial growth and ion implantation are repeated alternately until a certain drift-layer thickness is achieved. In this study, we fabricated two types of test elemental groups with an SJ structure to evaluate the breakdown voltage (VBD) and specific resistivity of the drift layer (Rdrift). Experimental results show that VBD exceeded the theoretical limit of the 4H-SiC by 300V, and Rdrift agreed well with the estimated value from the device simulation. The beneficial effects of the SJ structure in the SiC material on VBD and Rdrift were confirmed for the first time.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

845-850

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.845

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Online since:

February 2014

Authors:

Ryoji Kosugi*, Yuuki Sakuma, Kazutoshi Kojima, Sachiko Itoh, Akiyo Nagata, Tsutomu Yatsuo, Yasunori Tanaka, Hajime Okumura

Keywords:

Breakdown Voltage, Implantation, SJ, Specific On-Resistance, Super-Junction

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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