Variant of Excess Current in 4H-SiC pn Structures

Anatoly M. Strel'chuk; Evgenia V. Kalinina; Alexander A. Lebedev; Irina K. Boricheva; Vladimir V. Pavshukov

doi:10.4028/www.scientific.net/MSF.778-780.859

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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Variant of Excess Current in 4H-SiC pn Structures

Variant of Excess Current in 4H-SiC pn Structures

Abstract:

Excess currents and defects were investigated in the 4H-SiC p⁺nn⁺ structures created by implantation. It was found that the principal p⁺n junction is shunted by several or multiple Schottky barriers connected in parallel to the principal pn junction and formed by a contact of Al on the surface of p⁺-layer with n-layer perhaps with participation of carbon coated surfaces of the pits or other defects. Amount and area of Schottky barriers vary for different pn structures, in connection with which vary as the value of the excess current and character of the current-voltage dependence, and, apparently, that was observed in some cases, the instability of excess current.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

859-862

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.859

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Online since:

February 2014

Authors:

Anatoly M. Strel'chuk*, Evgenia V. Kalinina, Alexander A. Lebedev, Irina K. Boricheva, Vladimir V. Pavshukov

Keywords:

4H-SiC pn Structures, Excess Current, Natural JBS Structure, SEM, Shunt

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