Comparison of 5kV SiC JBS and PiN Diodes

Maxime Berthou; Philippe Godignon; Jose Calvo; Andrei Mihaila; E. Bianda; Iulian Nistor

doi:10.4028/www.scientific.net/MSF.778-780.867

Paper Titles

V_F Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers
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13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
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Variant of Excess Current in 4H-SiC pn Structures
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The Cryogenic Testing and Characterisation of SiC Diodes
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Comparison of 5kV SiC JBS and PiN Diodes
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650V SiC JFET for High Efficiency Applications
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Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power Supply
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Evaluation of SiC Stack Cascode for 200°C Operations
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Beam Acceleration Experiment with SiC Based Power Supply and the Next Generation SiC-JFET Package
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Comparison of 5kV SiC JBS and PiN Diodes

Comparison of 5kV SiC JBS and PiN Diodes

Abstract:

Recent availability of large SiC wafer with reduced density of defects and maturity of our fabrication process permitted to fabricate 15A-5kV W-JBS (25 mm²) and 15A-5kV PiN (10 mm²) diodes on 4 wafers. We will present and compare their static characteristics. Several W-JBS diodes have been packaged and switched at 2.5kV to study their reverse recovery and demonstrate the major advantages of the SIC-JBS devices at high voltage.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

867-870

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.867

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Online since:

February 2014

Authors:

Maxime Berthou*, Philippe Godignon, Jose Calvo, Andrei Mihaila, E. Bianda, Iulian Nistor

Keywords:

High Voltage, Junction Barrier Schottky (JBS) Diode, PiN Diode, Schottky Barrier Diode (SBD), Silicon Carbide (SiC)

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