Beam Acceleration Experiment with SiC Based Power Supply and the Next Generation SiC-JFET Package

Katsuya Okamura; Yutaka Osawa; Masayoshi Wake; Takashi Yoshimoto; Ryosuke Sasaki; Koichi Takaki; Ken Takayama

doi:10.4028/www.scientific.net/MSF.778-780.883

Paper Titles

Comparison of 5kV SiC JBS and PiN Diodes
p.867

650V SiC JFET for High Efficiency Applications
p.871

Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power Supply
p.875

Evaluation of SiC Stack Cascode for 200°C Operations
p.879

Beam Acceleration Experiment with SiC Based Power Supply and the Next Generation SiC-JFET Package
p.883

The Role of Substrate Compensation on DC Characteristics of 4H-SiC MESFET with Buffer Layer: A Combined Two-Dimensional Simulations and Analytical Study
p.887

Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits
p.891

SiC Current Limiting FETs (CLFs) for DC Applications
p.895

3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
p.899

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Beam Acceleration Experiment with SiC Based Power...

Beam Acceleration Experiment with SiC Based Power Supply and the Next Generation SiC-JFET Package

Abstract:

Utilizing a high power discrete SiC-JFET developed by KEK, a switching power supply (SPS) that had a circuit topology of H-bridge was designed and constructed to drive the induction acceleration system for the KEK digital accelerator. Following the hopeful result with a resistive dummy load, the SPS was installed in the actual KEK Digital Accelerator system. Consequently, heavy ion beam acceleration was successfully demonstrated. Moreover, we have started to develop a next generation package for a high voltage SiC-JFET, which has the voltage rating of 2.4 kV. Two in one module construction, bonding wire free connection, and bidirectional thermal flowing are included in the design concept of the new package.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2013

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

883-886

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.883

Citation:

Cite this paper

Online since:

February 2014

Authors:

Katsuya Okamura*, Yutaka Osawa, Masayoshi Wake, Takashi Yoshimoto, Ryosuke Sasaki, Koichi Takaki, Ken Takayama

Keywords:

Digital Accelerator, Induction Synchrotron, Junction Field Effect Transistor (JFET), Pulsed Power

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] K. Takayama, et al., Experimental Demonstration of the Induction Synchrotron, Phys. Rev. Lett., 98, no. 5, p.054801(1)-054801(4) (2007).

Google Scholar

[2] T. Iwashita, et al., KEK Digital Accelerator, Phys. Rev. ST-AB 14, 071301 (2011).

Google Scholar

[3] T. Yoshimoto, et al., Heavy Ion Beam Acceleration in the KEK Dogotal Accelerator: Induction Acceleration from 200 keV to a Few Tens of MeV, proceedings of the 19th International Symposium on Heavy Ion Inertial Fusion, Berkley, CA, USA (2012).

DOI: 10.2172/5925391

Google Scholar

[4] K. Okamura et al., Characterization of SiC JFET in novel packaging for 1 MHz Operation, Material Science Forum Vols. 717-720 (2012) pp.1029-1032.

DOI: 10.4028/www.scientific.net/msf.717-720.1029

Google Scholar

[5] K. Okamura et al., Novel Package of SiC-JFET for a Switching Pulse Supply Operating at 1 MHz for an Induction Synchrotron, ，IEEE Trans. Plasma Sci. ，vol. 40, no. 9, pp.2205-2210 (2012).

DOI: 10.1109/tps.2012.2207129

Google Scholar

[6] K. Okamura et al., A Compact Switching Power Supply Utilizing SiC-JFET for an Induction Synchrotron, Material Science Forum Vols. 740-7742 (2013) pp.1077-1080.

DOI: 10.4028/www.scientific.net/msf.740-742.1077

Google Scholar