650V SiC JFET for High Efficiency Applications

Wolfgang Bergner; Roland Rupp; Uwe Kirchner; Daniel Kueck

doi:10.4028/www.scientific.net/MSF.778-780.871

Paper Titles

13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
p.855

Variant of Excess Current in 4H-SiC pn Structures
p.859

The Cryogenic Testing and Characterisation of SiC Diodes
p.863

Comparison of 5kV SiC JBS and PiN Diodes
p.867

650V SiC JFET for High Efficiency Applications
p.871

Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power Supply
p.875

Evaluation of SiC Stack Cascode for 200°C Operations
p.879

Beam Acceleration Experiment with SiC Based Power Supply and the Next Generation SiC-JFET Package
p.883

The Role of Substrate Compensation on DC Characteristics of 4H-SiC MESFET with Buffer Layer: A Combined Two-Dimensional Simulations and Analytical Study
p.887

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780650V SiC JFET for High Efficiency Applications

650V SiC JFET for High Efficiency Applications

Abstract:

This paper presents for the first time a 650V SiC JFET switch. Although this application class is highly competitive and occupied by Silicon devices the characterization data show unique features which make the SiC switch an outstanding option for future system integration.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

871-874

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.871

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Online since:

February 2014

Authors:

Wolfgang Bergner*, Roland Rupp, Uwe Kirchner, Daniel Kueck

Keywords:

650V, Junction Field Effect Transistor (JFET), Silicon Carbide (SiC), Switch

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References

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