Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power Supply

Satoru Akiyama; Kaoru Katoh; Haruka Shimizu; Ayumu Hatanaka; Takashi Ogawa; Natsuki Yokoyama; Katsumi Ishikawa

doi:10.4028/www.scientific.net/MSF.778-780.875

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The Cryogenic Testing and Characterisation of SiC Diodes
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Comparison of 5kV SiC JBS and PiN Diodes
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650V SiC JFET for High Efficiency Applications
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Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power Supply
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Evaluation of SiC Stack Cascode for 200°C Operations
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Beam Acceleration Experiment with SiC Based Power Supply and the Next Generation SiC-JFET Package
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The Role of Substrate Compensation on DC Characteristics of 4H-SiC MESFET with Buffer Layer: A Combined Two-Dimensional Simulations and Analytical Study
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Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Gate-Drive Voltage Design for 600-V...

Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power Supply

Abstract:

A gate-drive voltage for a normally-off silicon-carbide vertical-trench junction-gate field-effect transistor (JFET) was designed for a server power supply with 94% efficiency. Since the on-state resistance of the JFET is strongly depends on the gate voltage and a large gate-leakage current between the gate electrode and source flows by applying an excessively high-gate voltage, we therefore must set an adequate turn-on gate-drive voltage to suppress the increase in power loss. The optimum gate-drive voltage design was estimated to be 2.1 V, resulting in a high efficiency of 94% even with a gate-drive voltage variation of ±0.3 V.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

875-878

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.875

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Online since:

February 2014

Authors:

Satoru Akiyama*, Kaoru Katoh, Haruka Shimizu, Ayumu Hatanaka, Takashi Ogawa, Natsuki Yokoyama, Katsumi Ishikawa

Keywords:

Gate-Drive, Junction Field-Effect Transistor, Server Power Supply, Silicon Carbide (SiC)

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References

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