Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits

Viorel Banu; Josep Montserrat; Mihaela Alexandru; Xavier Jordá; José Millan; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.778-780.891

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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Monolithic Integration of Power MESFET for High...

Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits

Abstract:

This work provides experimental result on fabricated 4H-SiC lateral power MESFET intended to be used in further development of high temperature integrated circuits for power application. The power SiC MESFET device was developed using a planar technology on silicon carbide and P implant isolation technique. Its destination to monolithic integration demands a lateral layout connection topology. The use of quite high doped N type epitaxial layer (10¹⁷cm^-3) typical for the integrated circuits raises difficulties to keep the leakage current of the Schottky gate in a decent range. Therefore, a hexagonal close loop gate in conjunction with three metal interconnection levels was adopted, thus obtaining a compact lateral MESFET device and avoiding any drain to source parasitic leakage path. Using the tungsten gate MESFETS, the first generation of monolithic integrated lateral power MESFET device was integrated on the same wafer with digital circuits and a voltage reference analog circuit able to operate up to 250C. The temperature range can be next improved by using higher barrier for the gate contact.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

891-894

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.891

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Online since:

February 2014

Authors:

Viorel Banu*, Josep Montserrat, Mihaela Alexandru, Xavier Jordá, José Millan, Philippe Godignon

Keywords:

4H-SiC, High-Temperature, Lateral MESFET, Planar Integrated Circuits, Power MESFET

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References

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