SiC Current Limiting FETs (CLFs) for DC Applications

Abstract:

To address safety issue of DC networks in distribution and generation plants, a specific Current Limiting FET has been design. The fabricated power switch is able to operate in both forward and reverse conduction mode. Short-circuit time to failure has been adjust and a current sensing electrode as been added to ease the monitoring and the drive of this switch. Fabricated devices have been packaged in TO3 metal can, providing good heat conduction and durability. A maximum short circuit energy of 70J/cm2 as been measured for a IN = 6 A VBR = 1800 V rated device, corresponding to a short-circuit time before failure of tCC = 21ms under VDC = 300 V .

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 895-898
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.895
• Online since: February 2014
• Authors: Dominique Tournier*, Philippe Godignon, Shi Qin Niu, Jean François de Palma
• Keywords: Current Limiting Device, Serial Protection, Short-Circuit

References

[1] Salomonsson, D.; Soder, L.; Sannino, A., Protection of Low-Voltage DC Microgrids, in: Power Delivery, IEEE Transactions on , Vol. 24, no. 3, p.1045, 1053, July (2009).

DOI: 10.1109/tpwrd.2009.2016622

[2] Tournier, D.; Godignon, P.; Montserrat, J.; Planson, D.; Raynaud, C.; Chante, J. -P; De Palma, J. -F.; Sarrus, F. A 4H-SiC high-power-density VJFET as controlled current limiter, in: Industry Applications, IEEE Transactions on , Vol. 39, no. 5, p.1508, 1513, Sept. -Oct. (2003).

DOI: 10.1109/tia.2003.816465

[3] Tournier, D., D., Bevilacqua P. , Planson D. , Morel H., Brosselard P. , Montserrat J., Lhorte A., Carcouet S. and Leonard D. High Power Density SiC 450A AccuMOSFET for Current Limiting Applications, in : Materials Science Forum Vol. 615-617 (2009).

DOI: 10.4028/www.scientific.net/msf.615-617.911

[4] Sanchez, J. -L, Leturcq, P., Austin, P., Berriane, R., Breil, M.; Anceau, C., Ayela, C. Design and fabrication of new high voltage current limiting devices for serial protection applications, in : Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on , p.201.

DOI: 10.1109/ispsd.1996.509481

[5] Xue Qing L., Alexandrov P., Fursin L., Dries Ch. and H. Zhao J. H. SiC Solid-State Disconnect for High Power System Applications, in: Materials Science Forum Vol. 717-720 (May 2012): p.1249, 1252.

DOI: 10.4028/www.scientific.net/msf.717-720.1249

[6] Godignon, P., Jorda, X., Vellvehi, M., Perpina, X., Banu, V., Lopez, D., Barbero, J., Brosselard, P., Massetti, S. SiC Schottky Diodes for Harsh Environment Space Applications, in : Industrial Electronics, IEEE Transactions on , Vol. 58, no. 7, p.2582, 2590, July (2011).

DOI: 10.1109/tie.2010.2080252

[7] Boughrara, Narjes, Sabrine Moumen, Stéphane Lefebvre, Zoubir Khatir, Peter Friedrichs, et J. -C. Faugieres. Robustness of SiC JFET in short-circuit modes, in: Electron Device Letters, IEEE 30, no 1 (2009): 51-53.

DOI: 10.1109/led.2008.2008668