A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance

Takeyoshi Masuda; Keiji Wada; Toru Hiyoshi; Yu Saito; Hideto Tamaso; Mitsuhiko Sakai; Kenji Hiratsuka; Yasuki Mikamura; Masanori Nishiguchi; Tomoaki Hatayama; Hiroshi Yano

doi:10.4028/www.scientific.net/MSF.778-780.907

Paper Titles

Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits
p.891

SiC Current Limiting FETs (CLFs) for DC Applications
p.895

3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
p.899

1700V, 5.5mOhm-cm² 4H-SiC DMOSFET with Stable 225°C Operation
p.903

A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance
p.907

40mΩ / 1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications
p.911

Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination
p.915

4H-SiC Trench MOSFET with Bottom Oxide Protection
p.919

SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction Diode
p.923

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780A Novel Truncated V-Groove 4H-SiC MOSFET with High...

A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance

Abstract:

A breakdown of a conventional trench SiC-MOSFET is caused by oxide breakdown at the bottom of the trench. We have fabricated a novel trench SiC-MOSFET with buried p+ regions and demonstrated the high breakdown voltage of 1700 V and the specific on-resistance of 3.5 mΩcm².