4H-SiC Trench MOSFET with Bottom Oxide Protection

Yasuhiro Kagawa; Nobuo Fujiwara; Katsutoshi Sugawara; Rina Tanaka; Yutaka Fukui; Yasuki Yamamoto; Naruhisa Miura; Masayuki Imaizumi; Shuhei Nakata; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.778-780.919

Paper Titles

1700V, 5.5mOhm-cm² 4H-SiC DMOSFET with Stable 225°C Operation
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A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance
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40mΩ / 1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications
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Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination
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4H-SiC Trench MOSFET with Bottom Oxide Protection
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SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction Diode
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SiC Epi-Channel Lateral MOSFETs
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600 V -Class V-Groove SiC MOSFETs
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14.6 mΩcm² 3.3 kV DIMOSFET on 4H-SiC (000-1)
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-7804H-SiC Trench MOSFET with Bottom Oxide Protection

4H-SiC Trench MOSFET with Bottom Oxide Protection

Abstract:

Ensuring gate oxide reliability and low switching loss is required for a trench gate SiC-MOSFET. We developed a trench gate SiC-MOSFET with a p-type region, named Bottom P-Well (BPW), formed at the bottom of the trench gate for bottom oxide protection. We can see an effective reduction in the maximum bottom oxide electric field (E_ox) and a significant improvement in dynamic characteristics with a grounded BPW, whose dV/dt is 76 % larger than that with a floating BPW due to reduction in gate-drain capacitance (C_gd). The grounded BPW is found to be an effective means of both suppressing E_ox and reducing switching loss.