600 V -Class V-Groove SiC MOSFETs

Yu Saito; Masaki Furumai; Toru Hiyoshi; Keiji Wada; Takeyoshi Masuda; Kenji Hiratsuka; Yasuki Mikamura; Tomoaki Hatayama

doi:10.4028/www.scientific.net/MSF.778-780.931

Paper Titles

Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination
p.915

4H-SiC Trench MOSFET with Bottom Oxide Protection
p.919

SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction Diode
p.923

SiC Epi-Channel Lateral MOSFETs
p.927

600 V -Class V-Groove SiC MOSFETs
p.931

14.6 mΩcm² 3.3 kV DIMOSFET on 4H-SiC (000-1)
p.935

1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer
p.939

Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs
p.943

Utilization of SiC MOSFET Body Diode in Hard Switching Applications
p.947

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780600 V -Class V-Groove SiC MOSFETs

600 V -Class V-Groove SiC MOSFETs

Abstract:

The authors applied a thick gate oxide layer at the trench bottoms to 600 V class truncated V-groove MOSFETs of which MOS channels were formed on 4H-SiC (0-33-8) facets and validated the static and switching characteristics. The specific on-resistance and the threshold voltage were 3.6 mΩ cm² (V_GS=18 V, V_DS=1 V) and about 1 V (normally-off), respectively. The breakdown voltage of the MOSFET with a thick oxide layer was 1,125 V (I_DS=1 μA). The switching losses during turn-on and turn-off operations were estimated to be 105.8 μJ and 82.5 μJ (300 V, 10 A) at room temperature. The switching characteristics exhibited low temperature dependence for turn-on/off time.