SiC Epi-Channel Lateral MOSFETs

Cheng Tyng Yen; Mietek Bakowski; Chien Chung Hung; Sergey A. Reshanov; Adolf Schöner; Chwan Ying Lee; Lurng Shehng Lee; Jeng Hua Wei; Ting Yu Chiu; Chih Fang Huang

doi:10.4028/www.scientific.net/MSF.778-780.927

Paper Titles

40mΩ / 1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications
p.911

Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination
p.915

4H-SiC Trench MOSFET with Bottom Oxide Protection
p.919

SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction Diode
p.923

SiC Epi-Channel Lateral MOSFETs
p.927

600 V -Class V-Groove SiC MOSFETs
p.931

14.6 mΩcm² 3.3 kV DIMOSFET on 4H-SiC (000-1)
p.935

1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer
p.939

Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs
p.943

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780SiC Epi-Channel Lateral MOSFETs

SiC Epi-Channel Lateral MOSFETs

Abstract:

SiC lateral MOSFETs with multi-layers epi-channels were studied in this work. The epi-channel with a high concentration n-type epilayer sandwiched by two lightly doped p-type layers showed a maximum field effect mobility of 17 cm²/V.s, improved from 1.53 cm²/V.s of devices without epi-channels. These devices are normally-off with an average threshold voltage of 1.34V.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

927-930

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.927

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Online since:

February 2014

Authors:

Cheng Tyng Yen*, Mietek Bakowski, Chien Chung Hung, Sergey A. Reshanov, Adolf Schöner, Chwan Ying Lee, Lurng Shehng Lee, Jeng Hua Wei, Ting Yu Chiu, Chih Fang Huang

Keywords:

4H-SiC, Buried Channel, Lateral, Mobility, MOSFET

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References

[1] K. Matocha and V. Tilak, Mater. Sci. Forum, 679-680, 318, (2011).

Google Scholar

[2] S. Dhar, S. Haney, L. Cheng, S. –R. Ryu, A. K. Agarwal, L. C. Yu and K. P. Cheung, J. Appl. Phys. 108, 054509, (2010).

Google Scholar

[3] S. Harada, S. Suzuki, J. Senzaki, R. Kosugi, K. Adachi, K. Fukuda, K. Arai, IEEE Electron Device Lett. 22 (6), 272, (2001).

DOI: 10.1109/55.924839

Google Scholar

[4] M. Uchida, N. Horikawa, K. Tanaka, K. Takahashi, T. Kiyosawa, M. Hayashi, M. Niwayama, O. Kusumoto, K. Adachi, C. Kudou, and M. Kitabatake, International Electron Device Meeting (IEDM), 2012, 26. 6.

DOI: 10.1109/iedm.2011.6131620

Google Scholar

[5] C. Bulucea, D. Kerr, Solid State Electron. 41 (9), 1345, (1997).

Google Scholar

[6] M. Grieb, M. Noborio, D. Peters, A. J. Bauer, P. Friedrichs, T. Kimoto, and H. Ryssel, Mater. Sci. Forum, 615-617, 521, (2009).

DOI: 10.4028/www.scientific.net/msf.615-617.521

Google Scholar

[7] S. K. Haney, V. Misra, D. J. Lichtenwalner, A. Agarwal, Mater. Sci. Forum, 750-742, 707, (2013).

Google Scholar