SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction Diode

Wei Ni; Kenta Emori; Toshiharu Marui; Yuji Saito; Shigeharu Yamagami; Tetsuya Hayashi; Masakatsu Hoshi

doi:10.4028/www.scientific.net/MSF.778-780.923

Paper Titles

A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance
p.907

40mΩ / 1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications
p.911

Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination
p.915

4H-SiC Trench MOSFET with Bottom Oxide Protection
p.919

SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction Diode
p.923

SiC Epi-Channel Lateral MOSFETs
p.927

600 V -Class V-Groove SiC MOSFETs
p.931

14.6 mΩcm² 3.3 kV DIMOSFET on 4H-SiC (000-1)
p.935

1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer
p.939

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780SiC Trench MOSFET with an Integrated Low Von...

SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction Diode

Abstract:

We demonstrate a SiC trench MOSFET with an integrated low Von unipolar heterojunction diode (MOSHJD). A region of the heterojunction diode (HJD) was fabricated in a trench with p⁺-type poly-crystalline silicon on an n^--type epitaxial layer of 4H-SiC. The measured on-resistance (R_on) of the transistor action was 15 mΩcm². The measured V_on of the diode action was 2.2 V at a forward current density of 100 A/cm². The fabrication process of the MOSHJD is simple. First, the trenches of the MOSFET region and the HJD region are formed simultaneously; then poly-crystalline silicon is deposited to form the gate electrode of the MOSFET region and the anode electrode of the HJD region at the same time.