40mΩ / 1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications

Abstract:

Device technologies of SiC MOSFETs have nearly matured to the level of mass production and one of the remaining tasks is to serve better solutions in view of both costs and performances for practical systems. Elimination of external reverse diodes in inverter circuits is one of the solutions, by which total area of the SiC chips is greatly reduced leading to lower material cost. A DioMOS (Diode in SiC MOSFET) successfully integrates the reverse diode without any increase of the chip size from the original MOS transistor by utilizing an n-type epitaxial channel under the MOS gate for the reverse conduction path of the diode. The basic concept of the DioMOS has been proposed [1]; meanwhile, further reduction of the on-state resistance together with confirmation of high-speed switching is necessary for its application in power switching systems. In this paper, low on-state resistance (Ron) of 40mΩ and blocking voltage (BVds) of 1700V as well as improved switching performances of DioMOS are demonstrated. The measured results suggest DioMOS to be satisfactory for practical use.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 911-914
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.911
• Online since: February 2014
• Authors: Atsushi Ohoka*, Nobuyuki Horikawa, Tsutomu Kiyosawa, Haruyuki Sorada, Masao Uchida, Yoshihiko Kanzawa, Kazuyuki Sawada, Tetsuzo Ueda, Eiji Fujii
• Keywords: Diode, DioMOS, Epitaxial Channel, MOSFET, Silicon Carbide (SiC)

References

[1] M. Uchida et al., in IEEE Int. Electron Devices Meeting (Washington, DC, 2011), p.602.