3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Akio Takatsuka; Yasunori Tanaka; Koji Yano; Norio Matsumoto; Tsutomu Yatsuo; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.778-780.899

Paper Titles

Beam Acceleration Experiment with SiC Based Power Supply and the Next Generation SiC-JFET Package
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The Role of Substrate Compensation on DC Characteristics of 4H-SiC MESFET with Buffer Layer: A Combined Two-Dimensional Simulations and Analytical Study
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Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits
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SiC Current Limiting FETs (CLFs) for DC Applications
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3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
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A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance
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40mΩ / 1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications
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Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-7803 kV Normally-Off 4H-SiC Buried Gate Static...

3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Abstract:

3 kV normally-off SiC-buried gate static induction transistors (SiC-BGSITs) were fabricated by using an innovative fabrication process that was used by us previously to fabricate 0.7–1.2 kV SiC-BGSITs. The fabricated device shows the lowest specific on-resistance of 9.16 mΩ·cm², compared to all other devices of the same class. The threshold voltage of this device was 1.4 V at room temperature and was maintained at values more than 1 V with normally-off characteristics at 200 °C. The device can block drain voltage of 3 kV with a leakage current density of 6.9 mA/cm².

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

899-902

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.899

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Online since:

February 2014

Authors:

Akio Takatsuka*, Yasunori Tanaka, Koji Yano, Norio Matsumoto, Tsutomu Yatsuo, Kazuo Arai

Keywords:

Buried Gate Static Induction Transistor, High Voltage, Normally-Off, Silicon Carbide (SiC)

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References

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