1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

Kevin Matocha; Kiran Chatty; Sujit Banerjee; Larry B. Rowland

doi:10.4028/www.scientific.net/MSF.778-780.903

Paper Titles

The Role of Substrate Compensation on DC Characteristics of 4H-SiC MESFET with Buffer Layer: A Combined Two-Dimensional Simulations and Analytical Study
p.887

Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits
p.891

SiC Current Limiting FETs (CLFs) for DC Applications
p.895

3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
p.899

1700V, 5.5mOhm-cm² 4H-SiC DMOSFET with Stable 225°C Operation
p.903

A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance
p.907

40mΩ / 1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications
p.911

Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination
p.915

4H-SiC Trench MOSFET with Bottom Oxide Protection
p.919

HomeMaterials Science ForumMaterials Science Forum Vols. 778-7801700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable...

1700V, 5.5mOhm-cm² 4H-SiC DMOSFET with Stable 225°C Operation

Abstract:

We report a 1700V, 5.5mΩ-cm² 4H-SiC DMOSFET capable of 225°C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mΩ-cm² at 225°C, an increase of only 60% compared to the room temperature value. The low specific on-resistance at high temperatures enables a smaller die size for high temperature operation. Under a negative gate bias temperature stress (BTS) at V_GS=-15 V at 225°C for 20 minutes, the devices show a threshold voltage shift of ΔV_TH=-0.25 V demonstrating one of the key device reliability requirements for high temperature operation.