14.6 mΩcm2 3.3 kV DIMOSFET on 4H-SiC (000-1)

Hiroshi Kono; Masaru Furukawa; Keiko Ariyoshi; Takuma Suzuki; Yasunori Tanaka; Takashi Shinohe

doi:10.4028/www.scientific.net/MSF.778-780.935

Paper Titles

4H-SiC Trench MOSFET with Bottom Oxide Protection
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SiC Epi-Channel Lateral MOSFETs
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600 V -Class V-Groove SiC MOSFETs
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p.935

1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer
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Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs
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Utilization of SiC MOSFET Body Diode in Hard Switching Applications
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Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-78014.6 mΩcm2 3.3 kV DIMOSFET on 4H-SiC (000-1)

14.6 mΩcm² 3.3 kV DIMOSFET on 4H-SiC (000-1)

Abstract:

Silicon carbide double-implanted metal-oxide-semiconductor field-effect transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon face. The effect of current spread layer (CSL) structure was studied. 1.9 mm × 1.9 mm DIMOSFETs were characterized from room temperature to 200°C. At room temperature, the specific on-resistance of this MOSFET was 14.8 mΩcm² at a gate bias of 20 V and a drain voltage of 0.5 V. The blocking voltage of this MOSFET was 3300 V. At 300 °C, the specific on-resistance increased from 14.8 mΩcm² to 83.9 mΩcm² and the threshold voltage decreased from 5.3 V to 3.4 V.

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Materials Science Forum (Volumes 778-780)

Pages:

935-938

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.935

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Online since:

February 2014

Authors:

Hiroshi Kono*, Masaru Furukawa, Keiko Ariyoshi, Takuma Suzuki, Yasunori Tanaka, Takashi Shinohe

Keywords:

4H-SiC, C-Face, DIMOSFET, MOSFET

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