Utilization of SiC MOSFET Body Diode in Hard Switching Applications

Alexander Bolotnikov; John Glaser; Jeff Nasadoski; Peter Losee; Steven Klopman; Alfred Permuy; Ljubisa Stevanovic

doi:10.4028/www.scientific.net/MSF.778-780.947

Paper Titles

600 V -Class V-Groove SiC MOSFETs
p.931

14.6 mΩcm² 3.3 kV DIMOSFET on 4H-SiC (000-1)
p.935

1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer
p.939

Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs
p.943

Utilization of SiC MOSFET Body Diode in Hard Switching Applications
p.947

Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode
p.951

High Temperature Reliability of the SiC-MOSFET with Copper Metallization
p.955

Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs
p.959

Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm² SiC-MOSFET
p.963

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Utilization of SiC MOSFET Body Diode in Hard...

Utilization of SiC MOSFET Body Diode in Hard Switching Applications

Abstract:

This work discusses the possibility of using SiC MOSFET body diode in switching power conversion applications, focusing on performance and reliability aspects.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

947-950

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.947

Citation:

Cite this paper

Online since:

February 2014

Authors:

Alexander Bolotnikov*, John Glaser, Jeff Nasadoski, Peter Losee, Steven Klopman, Alfred Permuy, Ljubisa Stevanovic

Keywords:

Body Diode, Buck-Boost Converter, MOSFET, Silicon Carbide (SiC)

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