Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm2 SiC-MOSFET

Shiro Hino; Masanao Ito; Naruhisa Miura; Masayuki Imaizumi; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.778-780.963

Paper Titles

Utilization of SiC MOSFET Body Diode in Hard Switching Applications
p.947

Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode
p.951

High Temperature Reliability of the SiC-MOSFET with Copper Metallization
p.955

Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs
p.959

Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm² SiC-MOSFET
p.963

Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications
p.967

Comparison of 600V Si, SiC and GaN Power Devices
p.971

Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H₂ Rich Wet Re-Oxidation
p.975

Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films
p.979

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Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm² SiC-MOSFET

Abstract:

The influences of internally unbalanced switching behavior on the switching characteristics and RBSOA were investigated in order to realize a large-size SiC-MOSFET. Specially designed small-size MOSFETs in which the unbalanced behavior is enhanced by adjusting the geometrical gate structures were fabricated, and their switching characteristics were evaluated. It was found that the same switching characteristics can be obtained by regarding them as MOSFETs with high inner gate resistances. A 1-cm² SiC-MOSFET was fabricated, and high dV/dt switching and high turn-off endurance were demonstrated.