Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H2 Rich Wet Re-Oxidation

Mitsuo Okamoto; Youichi Makifuchi; Tsuyoshi Araoka; Masaki Miyazato; Yoshiyuki Sugahara; Takashi Tsutsumi; Yasuhiko Onishi; Hiroshi Kimura; Shinsuke Harada; Kenji Fukuda; Akihiro Otsuki; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.778-780.975

Paper Titles

Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs
p.959

Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm² SiC-MOSFET
p.963

Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications
p.967

Comparison of 600V Si, SiC and GaN Power Devices
p.971

Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H₂ Rich Wet Re-Oxidation
p.975

Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films
p.979

Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET
p.985

Comparative Study of 4H-SiC DMOSFETs with N₂O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal
p.989

Characterization of SiO₂/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFET
p.993

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Improvement of Channel Mobility in 4H-SiC C-Face...

Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H₂ Rich Wet Re-Oxidation

Abstract:

4H-SiC(000-1) C-face was oxidized in H₂O and H₂ mixture gas (H₂ rich wet ambient) for the first time. H₂ rich wet ambient was formed by the catalytic water vapor generator (WVG) system, where the catalytic action instantaneously enhances the reactivity between H₂ and O₂ to produce H₂O. The dependence of SiC oxidation rate on the H₂O partial pressure was investigated. We fabricated 4H-SiC C-face MOS capacitor and MOSFET by the H₂ rich wet re-oxidation following the dry O₂ oxidation. The density of interface traps was reduced and the channel mobility was improved in comparison with the conventional O₂ rich wet oxidation.