Comparative Study of 4H-SiC DMOSFETs with N2O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal

Cheng Tyng Yen; Chien Chung Hung; Aleksey Mikhaylov; Chwan Ying Lee; Lurng Shehng Lee; Jeng Hua Wei; Ting Yu Chiu; Chih Fang Huang; Sergey A. Reshanov; Adolf Schöner

doi:10.4028/www.scientific.net/MSF.778-780.989

Paper Titles

Comparison of 600V Si, SiC and GaN Power Devices
p.971

Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H₂ Rich Wet Re-Oxidation
p.975

Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films
p.979

Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET
p.985

Comparative Study of 4H-SiC DMOSFETs with N₂O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal
p.989

Characterization of SiO₂/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFET
p.993

Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs
p.997

Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation
p.1001

SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
p.1005

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Comparative Study of 4H-SiC DMOSFETs with N2O...

Comparative Study of 4H-SiC DMOSFETs with N₂O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal

Abstract:

Two kinds of gate oxides, direct thermal oxidation in a nitrous oxide ambient at 1250°C(TGO) and a PECVD oxide followed by a post deposition oxidation in nitrous at 1150°C (DGO) were studied. DGO showed a lower interface trap density and was able to provide a higher current as being implemented in MOSFETs through the improved channel mobility. However the 6.45 MV/cm average breakdown field of DGO is lower than the 10.1 MV/cm breakdown field of TGO. The lower breakdown field, more leaky behavior and the existence of multiple breakdown mechanisms suggest that DGO needs further improvements before it can be used in real applications.