Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs

Philip Tanner; Sima Dimitrijev; Hamid Amini Moghadam; Amirhossein Aminbeidokhti; Ji Sheng Han

doi:10.4028/www.scientific.net/MSF.778-780.997

Paper Titles

Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films
p.979

Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET
p.985

Comparative Study of 4H-SiC DMOSFETs with N₂O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal
p.989

Characterization of SiO₂/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFET
p.993

Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs
p.997

Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation
p.1001

SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
p.1005

Modeling of High Performance 4H-SiC Emitter Coupled Logic Circuits
p.1009

Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures
p.1013

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Selection of SPICE Parameters and Equations for...

Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs

Abstract:

Power MOSFETs based on 4H-SiC have recently been commercialized and so circuit designers require SPICE models for simulation purposes in a range of applications including switch-mode power supplies. We present a selection of SPICE LEVEL 3 parameters and equations that can be used for effective circuit simulation of these MOSFETs, taking into account their unique characteristics for both static and dynamic operation.