SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs

Luigia Lanni; B. Gunnar Malm; Mikael Östling; Carl Mikael Zetterling

doi:10.4028/www.scientific.net/MSF.778-780.1005

Paper Titles

Comparative Study of 4H-SiC DMOSFETs with N₂O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal
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Characterization of SiO₂/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFET
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Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs
p.997

Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation
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SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
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Modeling of High Performance 4H-SiC Emitter Coupled Logic Circuits
p.1009

Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures
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Stability of Current Gain in SiC BJTs
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Optical Triggering of High Current (1300 A), High-Voltage (12 kV) 4H-SiC Thyristor
p.1021

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780SiC Etching and Sacrificial Oxidation Effects on...

SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs

Abstract:

Performance of 4H-SiC BJTs fabricated on a single 100mm wafer with different SiC etching and sacrificial oxidation procedures is compared in terms of peak current gain in relation to base intrinsic sheet resistance. The best performance was achieved when device mesas were defined by inductively coupled plasma etching and a dry sacrificial oxide was grown at 1100 °C.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1005-1008

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1005

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Online since:

February 2014

Authors:

Luigia Lanni*, B. Gunnar Malm, Mikael Östling, Carl Mikael Zetterling

Keywords:

Bipolar Junction Transistor (BJT), Current Gain, ICP, RIE, Sacrificial Oxidation, SiC Etching, Silicon Carbide (SiC)

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References

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