Optical Triggering of High Current (1300 A), High-Voltage (12 kV) 4H-SiC Thyristor

Sergey Rumyantsev; Michael E. Levinshtein; Michael Shur; Lin Cheng; Anant K. Agarwal; John W. Palmour

doi:10.4028/www.scientific.net/MSF.778-780.1021

Paper Titles

SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
p.1005

Modeling of High Performance 4H-SiC Emitter Coupled Logic Circuits
p.1009

Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures
p.1013

Stability of Current Gain in SiC BJTs
p.1017

Optical Triggering of High Current (1300 A), High-Voltage (12 kV) 4H-SiC Thyristor
p.1021

Static and Dynamic Performance Evaluation of >13 kV SiC-ETO and its Application as a Solid-State Circuit Breaker
p.1025

20 kV 4H-SiC N-IGBTs
p.1030

On the TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTs
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Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs
p.1038

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Optical Triggering of High Current (1300 A),...

Optical Triggering of High Current (1300 A), High-Voltage (12 kV) 4H-SiC Thyristor

Abstract:

A 12 kV class 4H-SiC thyristor with a pilot thyristor (an amplification step) has been triggered to a current I_max= 1310 A in a mixed resistive-inductive load circuit. In order to further increase the I_max, the homogeneity of the initially turned-on region should be improved and/or additional amplification steps introduced

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1021-1024

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1021

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Online since:

February 2014

Authors:

Sergey Rumyantsev, Michael E. Levinshtein, Michael Shur, Lin Cheng*, Anant K. Agarwal, John W. Palmour

Keywords:

Optical Triggering, Power Device, Silicon Carbide (SiC), Thyristors

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References

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