Static and Dynamic Performance Evaluation of >13 kV SiC-ETO and its Application as a Solid-State Circuit Breaker

Abstract:

This study addresses the transient and steady-state performance of a >13 kV SiC ETO as a Solid-State Circuit Breaker (SSCB). The developed SiC-ETO is based on a 1 cm², 15 kV SiC p-GTO with an extremely low differential resistance. Static performance of the device, including the on-state voltage drop at different temperatures and different currents has been carried out in this paper. Furthermore, transient performance of the device, including the turn off energy of the device has been studied. Also, the superior performance of the p-type SiC-ETO has been exploited to design and implement a solid-state circuit breaker. The studies verify the superiority of the SiC p-ETO compared to other solid state devices for this application.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 1025-1029
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.1025
• Online since: February 2014
• Authors: Mohammad Ali Rezaei*, Gang Yao Wang, Alex Q. Huang, Lin Cheng, John W. Palmour, Charles Scozzie
• Keywords: Emitter Turn-Off Thyristor, ETO, High Voltage, Silicon Carbide (SiC)

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