On the TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTs

Muhammad Nawaz; Filippo Chimento

doi:10.4028/www.scientific.net/MSF.778-780.1034

Paper Titles

Stability of Current Gain in SiC BJTs
p.1017

Optical Triggering of High Current (1300 A), High-Voltage (12 kV) 4H-SiC Thyristor
p.1021

Static and Dynamic Performance Evaluation of >13 kV SiC-ETO and its Application as a Solid-State Circuit Breaker
p.1025

20 kV 4H-SiC N-IGBTs
p.1030

On the TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTs
p.1034

Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs
p.1038

Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate Monitoring
p.1042

Nuclear Radiation Detectors Based on 4H-SiC p⁺-n Junction
p.1046

Optical and Electrical Simulations of Solar Cell Based on Silicon and Silicon Carbide
p.1050

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On the TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTs

Abstract:

This paper addresses the design diagnostic study of 4H-SiC based IGBTs using two dimensional numerical computer simulations. Using identical set of physical device parameters (doping, thicknesses), simulated structure was first calibrated with the experimental data. A minority carrier life time in the drift layer of 1.0 1.6 μs and contact resistivity of 0.5 - 1.0 x 10^-4 Ω-cm² produces a close match with the experimental device. A decay in the device transconductance and threshold voltage is observed with increasing temperature. The on-resistance first decays with temperature (i.e., increased in ionization level, and increase in minority carrier life time), stays nearly constant with further increase in the temperature (may be all carriers are now fully ionized and increase in carrier life time is compensated with decrease in the carrier mobility) and finally increases linearly with temperature (> 450 K) due to decrease in the carrier mobility. The design of buffer layer is investigated that shows lower on-state losses with thin high doped buffers. For the design of devices over 15 20 kV, the design of drift layer demands a doping of < 2.0 x 10¹⁴ cm^-3 with epitaxial layer quality giving a carrier life time over 2.0 μs.