Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs

Abstract:

High-voltage SiC p-channel insulated-gate bipolar transistors (p-IGBT) utilizing current-spreading layer (CSL) formed by ion implantation are fabricated and their properties characterized. A high blocking voltage of 15 kV is achieved at room temperature by optimizing the JFET length. An ampere-class p-IGBT exhibited a low forward voltage drop of 8.5 V at 100 A/cm² and a low differential specific on-resistance of 33 mΩ cm² at 250 °C, while these values were high at room temperature. For further reduction of the forward voltage drop in the on-state and temperature stability, the temperature dependence of the JFET effect and carrier lifetime in p-IGBTs are investigated. Optimization of the JFET length using an epitaxial CSL, instead of applying ion implantation and lifetime enhancement, could lead to a further reduction of the forward voltage drop.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 1038-1041
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.1038
• Online since: February 2014
• Authors: Tadayoshi Deguchi*, Shuji Katakami, Hiroyuki Fujisawa, Kensuke Takenaka, Hitoshi Ishimori, Shinji Takasu, Manabu Takei, Manabu Arai, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura
• Keywords: Carrier Lifetime, Current-Spreading Layer, High Voltage, IGBT, JFET Effect, P-Channel

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