High Temperature Hydrogen Sensor Based on Silicon Carbide (SiC) MOS Capacitor Structure

Bogdan Ofrim; Gheorghe Brezeanu; Florin Draghici; Ion Rusu

doi:10.4028/www.scientific.net/MSF.778-780.1054

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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780High Temperature Hydrogen Sensor Based on Silicon...

High Temperature Hydrogen Sensor Based on Silicon Carbide (SiC) MOS Capacitor Structure

Abstract:

MOS capacitor devices based on silicon carbide (SiC) are largely used as hydrogen detectors in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is analyzed by extensive simulations. The sensitivity to hydrogen detection, stability to temperature variation and dependence on interface states concentration are evaluated. The effects of structure parameters on sensors performance are also investigated. Results show that the oxide layer type and thickness and the SiC polytype have a significant influence on the detectors performance. The proposed optimum structure for high temperature hydrogen detection is based on 3C-SiC substrate and 10nm TiO₂ layer. In accordance with the simulations results, three types of masks are designed for the fabrication of SiC MOS capacitor structures.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1054-1057

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1054

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Online since:

February 2014

Authors:

Bogdan Ofrim*, Gheorghe Brezeanu, Florin Draghici, Ion Rusu

Keywords:

Hydrogen Sensor, Mask, MOS Capacitor, Silicon Carbide (SiC)

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References

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