Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate Monitoring

Natsuko Fujita; Naoya Iwamoto; Shinobu Onoda; Takahiro Makino; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.778-780.1042

Paper Titles

Static and Dynamic Performance Evaluation of >13 kV SiC-ETO and its Application as a Solid-State Circuit Breaker
p.1025

On the TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTs
p.1034

Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs
p.1038

Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate Monitoring
p.1042

Nuclear Radiation Detectors Based on 4H-SiC p⁺-n Junction
p.1046

Optical and Electrical Simulations of Solar Cell Based on Silicon and Silicon Carbide
p.1050

High Temperature Hydrogen Sensor Based on Silicon Carbide (SiC) MOS Capacitor Structure
p.1054

Discriminating High k Dielectric Gas Sensors
p.1058

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Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate Monitoring

Abstract:

In order to test the response of radiation-induced current with wide range of dose rate, a Silicon Carbide (SiC) dosimeter is exposed to gamma-rays emitted from a ⁶⁰Co source. The SiC dosimeter in this study is made of a high purity semi-insulating 4H-SiC with nickel and aluminum electrodes. We have successfully demonstrated that the radiation-induced currents in the dosimeter show a linear relationship with the dose rate, and are repeatable and stable.