Discriminating High k Dielectric Gas Sensors

Sandip Kumar Roy; Konstantin V. Vassilevski; Christopher J. O'Malley; Nick G. Wright; Alton B. Horsfall

doi:10.4028/www.scientific.net/MSF.778-780.1058

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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Discriminating High k Dielectric Gas Sensors

Discriminating High k Dielectric Gas Sensors

Abstract:

High temperature gas sensors for the detection of harmful gases under extreme conditions have been demonstrated. Here, we show the detection and selective response of two SiC based MIS sensor structures with HfO₂ and TiO₂ high κ dielectric layers to two different hydrogen containing gases. The structures utilise a Pt catalytic gate contact and a high-κ dielectric that was grown on a thin SiO₂ layer, which was thermally grown on the Si face of epitaxial 4H SiC. The chemical characteristics of MIS capacitors have been studied in N₂, O₂, H₂ and CH₄ ambients at 573K. The data show a positive flatband voltage shift for oxygen and methane with respect to the nitrogen baseline, whilst hydrogen shows a negative shift. The response for the TiO₂ based sensor is significantly larger than that of the HfO₂ based device for hydrogen, enabling discrimination of gases within a mixture.

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Materials Science Forum (Volumes 778-780)

Pages:

1058-1062

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1058

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Online since:

February 2014

Authors:

Sandip Kumar Roy, Konstantin V. Vassilevski, Christopher J. O'Malley, Nick G. Wright, Alton B. Horsfall

Keywords:

Gas Sensing, High-Temperature, Methane, MIS Capacitor, Nitrogen, Oxygen

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