High Speed Rail Awaits the next Breakthrough of Power Semiconductors

Tetsuo Uzuka; Eisuke Masada

doi:10.4028/www.scientific.net/MSF.778-780.1071

Paper Titles

High Temperature Hydrogen Sensor Based on Silicon Carbide (SiC) MOS Capacitor Structure
p.1054

Discriminating High k Dielectric Gas Sensors
p.1058

Two Packaging Solutions for High Temperature SiC Diode Sensors
p.1063

Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds
p.1067

High Speed Rail Awaits the next Breakthrough of Power Semiconductors
p.1071

Progress in High Voltage SiC and GaN Power Switching Devices
p.1077

High-Efficiency Power Conversion Using Silicon Carbide Power Electronics
p.1083

Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings
p.1089

SiC Power Module for Compact Power Conversion Equipment
p.1096

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780High Speed Rail Awaits the next Breakthrough of...

High Speed Rail Awaits the next Breakthrough of Power Semiconductors

Abstract:

High Speed Rail (HSR) is expanding rapidly in the whole world in this decade. Almost all the high-speed trains are fed by high-voltage AC and are equipped with several large motors. In addition, High-speed trains have a strict restriction for both mass and size. Thus, HSR needs power semiconductors that can handle high-voltage and giant current. In addition, EMC problems become larger in these days, thus higher speed of switching is expected. From simple silicon diodes in 1960s, thyristors, GTO thyristors, IGBTs and until new wide gap devices such like SiC, the progress of power semiconductor and cooling system directly pulls the performance of high-speed rolling stock. In some cases, fixed installations for HSR are equipped with flexible AC transmission systems (FACTS) such as static VAR compensators (SVC), also.