SiC Power Module for Compact Power Conversion Equipment

Abstract:

In order for wide bandgap semiconductor power devices to be practical use in various power electronics applications, a 2in1 600V75A power package with a 200 degree Celsius heat resistance was newly developed on the premise of mass production. This package designed to specify a low inductance of less than 24nH enables SiC and GaN-based devices to be driven with a high slew rate up to 5kA/us under hard-switching condition. Furthermore, this package encapsulated by a epoxy resin of a high heat resistance and equipped with thick Cu heat spreader allow these power devices to be driven up to 200 degree Celsius and dissipate heat in large quantities (thermal resistance R_th,jc: 0.6K/W), which is found to make cooling heat sink simplified. We introduced 50ASiC-MOSFET in this package, and verified the operation on a power conditioner for Solar Photovoltaic cells up to 4kW output. A high power conversion efficiency of 97.7% was measured by our SiC power packages on downsized cooling heat sink in 1/4 volume, which was more efficient than Si-IGBT module by 1.5%.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 1096-1099
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.1096
• Online since: February 2014
• Authors: Kenya Yamashita*, Keishi Kato, Hiroki Ikeuchi, Junya Tanaka, Kei Toyota, Taichi Nakamura, Keiko Takahashi, Ryutaro Arakawa, Tatsuo Sasaoka
• Keywords: GaN, High Heat Resistance, Inverter Circuit, Low Inductance, Power Module, Silicon Carbide (SiC)

References

[1] M. Kitabatake, et. al., Power Electronics Conference (IPEC), 2010 International, pp.3249-3253.

[2] Advances in Silicon Carbide processing and Applications, edited by S. E. Saddow and A. Agarwal.

[3] Y. -F. Wu, et. al., the 69h IEEE Device Research Conference, Conference Digest, pp.217-218, (2011).