High-Efficiency Power Conversion Using Silicon Carbide Power Electronics

Abstract:

The message of this paper is that the silicon carbide power transistors of today are good enough to design converters with efficiencies and switching speeds beyond comparison with corresponding technology in silicon. This is the time to act. Only in the highest power range the devices are missing. Another important step towards high powers is to find new solutions for multi-chip circuit designs that are adapted to the high possible switching speeds of unipolar silicon carbide power transistors.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 1083-1088
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.1083
• Online since: February 2014
• Authors: Hans Peter Nee*, J. Rabkowski, D. Peftitsis, G. Tolstoy, J. Colmenares, Diane Perle Sadik, M. Bakowski, Jang Kwon Lim, A. Antonopoulos, L. Ängquist, M. Zdanowski
• Keywords: Dc-Dc Converter, Gate-Drive Circuit, Inverter, Modular Multilevel Converter, Parallel Connection, Power Electronics, Reverse Conduction, SiC BJT, SiC JFET, SiC MOSFET

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